Response Characteristics of a Piezoelectric Semiconductor Layer Under a Rigid Spherical Indenter

作     者：Liu, Jinxi Gao, Shijing Ju, Chengjian Nie, Guoquan Chen, Weiqiu 

作者机构：State Key Laboratory of Mechanical Behavior and System Safety of Traffic Engineering Structures Shijiazhuang Tiedao University Shijiazhuang050043 China School of Mechanical Engineering Shijiazhuang Tiedao University Shijiazhuang050043 China Department of Engineering Mechanics Hebei Key Laboratory for Mechanics of Intelligent Materials and Structures Shijiazhuang Tiedao University Shijiazhuang050043 China Key Lab of CAD & CG Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province Department of Engineering Mechanics Zhejiang University Hangzhou310027 China 

出 版 物：《SSRN》 

年 卷 期：2024年

核心收录：

主　　题：Piezoelectricity 

摘      要：This paper considers the axisymmetric frictionless indentation responses of a piezoelectric semiconductor (PSC) layer, which is perfectly bonded to a rigid substrate and acted on by a rigid spherical indenter. While both the indenter and the rigid substrate are assumed to be electrically insulating, the interaction of piezoelectricity and semiconducting property of PSC is fully taken into consideration. By the Hankel integral transformation, the indentation problem is reduced to a Fredholm integral equation of the second kind, which is solved numerically. The variations of the indentation force, electric potential and contact radius with the indentation depth are obtained. The effects of the layer thickness, indenter size and semiconducting on the variation relationships are analyzed in detail to achieve a better understanding of the response of the PSC layer under indentation. Furthermore, the theoretical results based on the singular integral equation method are verified by the finite element simulation. © 2024, The Authors. All rights reserved.