A Novel SGT MOSFET Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects

作     者：Mo, Weiye Ye, Jun Liu, Haonan Xiao, Xuan Fan, Wenqi Song, Yang Huang, Wei Wang, Tao Zhang, Qingdong Zhang, Debin Zhang, D.W. 

作者机构：Shanghai Institute of Intelligent Electronics and Systems State Key Laboratory of ASIC and Systems School of Microelectronics Fudan University Shanghai200433 China Wuxi China Resources Huajing Microelectronics Company Ltd. Jiangsu Wuxi214061 China Wuxi Microelectronics Scientific and Research Center Wuxi214125 China Shanghai Institute of Space Power-Sources Shanghai200245 China 

出 版 物：《IEEE Electron Device Letters》 (IEEE Electron Device Lett)

年 卷 期：2024年第45卷第7期

页      面：1253-1256页

核心收录：

学科分类：0303[法学-社会学] 080603[工学-有色金属冶金] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 0806[工学-冶金工程] 08[工学] 0702[理学-物理学] 

基　　金：This work was supported in part by the School of Microelectronics, Shanghai Institute of Intelligent Electronics and Systems, Fudan University in part by Wuxi China Resources Huajing Microelectronics Company Ltd and in part by Wuxi Microelectronics Scientific and Research Center 

主　　题：Capacitance 

摘      要：In this letter, a novel radiation-hardened SGT(N-SGT), with a specialized hardening process, is firstly developed and the radiation degradation model is proposed. N-SGT has more stable Vth and BV after 60Co irradiation, with only 0.16 V of |ΔVth| and 32.5 V of BV at a dose of 100 krad (Si), while it is 1.3 V of |ΔVth| and 22.5 V of BV for the Conventional-SGT (C-SGT). For N-SGT, lower QGOX reduces the effect of channel depletion, which makes the Vth change less. The lower QIPOX, QTROX and QIPOX: QTROX (1:3) effectively weaken the charge imbalance and slow down the BV degradation. Additionally, this letter firstly reveals the TID effects on capacitance characteristics, especially the increase of Cgd in C-SGT, indicating that QIPOX and QGOX caused the enhanced DIBL effect and channel depletion. Fortunately, N-SGT solves these problems well and achieved a good trade-off between BV degradation and channel depletion during TID radiation. © 1980-2012 IEEE.