Mid-infrared barium titanate electro-optic modulators based on a germanium-on-silicon platform

作     者：Huang, Tong Ma, Ruyuan Liu, Yingxuan Xu, Tianqi Qiu, Yang Zhao, Xingyan Zheng, Shaonan Zhong, Qize Dong, Yuan Hu, Ting 

作者机构：Shanghai Univ Sch Microelect Shanghai 201800 Peoples R China Shanghai Univ Shanghai Collaborat Innovat Ctr Intelligent Sensin Shanghai 201800 Peoples R China 

出 版 物：《APPLIED OPTICS》 (应用光学)

年 卷 期：2024年第63卷第19期

页      面：5208-5216页

核心收录：

学科分类：070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology National Natural Science Foundation of China [62204149, 62205193, U23A20356] Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai Technical Service Computing Center of Science and Engineering, Shanghai University 

主　　题：Crystalline materials Effective refractive index Free space optics Phase modulation Pockels effect Slot waveguides 

摘      要：Mid-infrared electro-optic (EO) modulation efficiency and high-frequency performance of barium titanate (BTO) modulators on a germanium-on-silicon platform are investigated. Leveraging its exceptional Pockels coefficients, BTO exhibits remarkable EO modulation capabilities in both transverse-electric (TE) mode for a-axis growth and transverse-magnetic (TM) mode for c-axis growth. At the wavelength of 3.8 mu m, the V pi L for a-axis oriented BTO (TE polarization) is 1.90 V cm, and for c-axis oriented BTO (TM polarization), it is 2.32 V cm, which have better performance than those of the Pockels effect based EO modulators from literature. In addition, the highfrequency EO response of the modulator is simulated, and a 3-dB EO bandwidth of 62.82 GHz with the optimized traveling wave electrodes is achieved, showing promise in the high-speed MIR applications such as free-space optical communications. (c) 2024 Optica Publishing Group