Insulating state in open quantum dots and quantum dot arrays

作     者：F. Ge C. Prasad A. Andresen J.P. Bird D.K. Ferry L.-H. Lin N. Aoki K. Nakao Y. Ochiai K. Ishibashi Y. Aoyagi T. Sugano 

作者机构：Center for Solid State Electronics Research & Department of Electrical Engineering Arizona State University Tempe AZ 85287-5706 USA Department of Materials Technology Chiba University 1-33 Yayoi-cho Inage-ku Chiba 236-8522 Japan Nanoelectronic Materials Laboratory Frontier Research Program RIKEN 2-1 Hirosawa Wako-shi Saitama 351-0198 Japan 

出 版 物：《Annalen der Physik》 

年 卷 期：1999年第9卷第1期

学科分类：07[理学] 0702[理学-物理学] 

主　　题：Localization Quantum dots Scaling 

摘      要：We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split-gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50 e 2 / h .