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作者机构:Institute of Polymer Optoelectronic Materials and Devices Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology South China University of Technology Guangzhou 510640 China
出 版 物:《Gongneng Cailiao/Journal of Functional Materials》 (Gongneng Cailiao)
年 卷 期:2011年第42卷第3期
页 面:574-576页
核心收录:
主 题:Phosphorescence
摘 要:Series of devices have been made based on a poss end capped polyfluorene and poly (N vinylcarazole) (PVK) as the host, a red Ir complex as the guest. An efficiency of 5.48cd/A was achieved, which surpassed that of device based on PVK as the host. The activity of PVK at the device based on PFO-poss as the host was also studied. We found PVK as the hole-transport layer also participate the process of energy exchange, which can raise the efficiency of the device.