New model of ferroelectric capacitor based on C-V, I-V, Q-V Characteristics

作     者：Chen, Xiaoming Tang, Ting'ao 

作者机构：State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China 

出 版 物：《Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors》 (Pan Tao Ti Hsueh Pao)

年 卷 期：2005年第26卷第5期

页      面：984-989页

核心收录：

主　　题：Capacitors 

摘      要：A new model is developed for describing the electrical behavior of ferroelectric capacitors. By modeling the ferroelectric capacitor as a switching capacitor (dipole capacitor) in series with a non-switching capacitor (linear capacitor) and this dipole capacitor as a collection of dipoles with a top electrode and a bottom electrode, and by assuming the probability density functions of dipoles coercive voltages (positive and negative) as t-distribution according to experiment results of ferroelectric capacitors C-V characteristic, the C-V, I-V, and Q-V expressions of ferroelectric capacitors are derived, and these expressions are described with only six parameters. The simulated results from these expressions are quite fitted with experiment results.