Optimized Design of Utb Soi Mosfet And Connections for 2.45g Weak Energy Density Harvesting

作     者：Zhang, YuChen Song, Jian-Jun Ren, JiaZhi Tang, AiLan 

作者机构：State Key Laboratory of Wide-Bandgap Semiconductor Devices and lntegrated Technology School of Microelectronics Xidian University Xi'An710071 China 

出 版 物：《SSRN》 

年 卷 期：2024年

核心收录：

主　　题：Threshold voltage 

摘      要：This paper presents and optimizes for the first time the design of UTB SOI MOSFET and its connection method for 2.45 GHz weak energy density harvesting, and optimizes the device structure parameters by Sentaurus TCAD software, so that the device exhibits the desired characteristics of high forward bias current and low reverse leakage current. The new connection method utilizes the device s back bias regulated threshold voltage to enable the device s dual gates to simultaneously control the channel current, resulting in a highly efficient RF-DC rectifier at a modest energy density of 2.45 *** Sentaurus Mixmode circuit mixing simulation module shows that in a half-wave rectifier circuit with loads of 0.1 pF and 20 kΩ, the single-tube energy conversion efficiencies of the new device reach 9.95% and 19.27% at input energies of -16 and -10 dBm, respectively, which are 2.73 and 2.48 times that of a silicon-based MOSFET under the same conditions. © 2024, The Authors. All rights reserved.