Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene

作     者：Lee, Hyobeom Im, Hayoon Choi, Byoung Ki Park, Kyoungree Chen, Yi Ruan, Wei Zhong, Yong Lee, Ji-Eun Ryu, Hyejin Crommie, Michael F. Shen, Zhi-Xun Hwang, Choongyu Mo, Sung-Kwan Hwang, Jinwoong 

作者机构：Department of Physics Institute of Quantum Convergence Technology Kangwon National University Chuncheon Korea Republic of Department of Physics Pusan National University Busan Korea Republic of Advanced Light Source Lawrence Berkeley National Laboratory BerkeleyCA United States Department of Physics University of California BerkeleyCA United States International Center for Quantum Materials School of Physics Peking University Beijing100871 China Collaborative Innovation Center of Quantum Matter Beijing100871 China Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials Peking University Beijing100871 China State Key Laboratory of Surface Physics New Cornerstone Science Laboratory Department of Physics Fudan University Shanghai China Geballe Laboratory for Advanced Materials Department of Physics and Applied Physics Stanford University StanfordCA United States Stanford Institute for Materials and Energy Sciences SLAC National Accelerator Laboratory Menlo ParkCA United States Max Planck POSTECH Center for Complex Phase Materials Pohang University of Science and Technology Pohang Korea Republic of Center for Spintronics Korea Institute of Science and Technology Seoul Korea Republic of Materials Sciences Division Lawrence Berkeley National Laboratory BerkeleyCA United States 

出 版 物：《arXiv》 (arXiv)

年 卷 期：2024年

核心收录：

主　　题：Molecular beam epitaxy 

摘      要：Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a controlled epitaxial growth of monolayer TaSe2 with different structural phases, 1H and 1T, on a bilayer graphene (BLG) substrate using molecular beam epitaxy, and its impact on the electronic properties of the heterostructures using angle-resolved photoemission spectroscopy. 1H-TaSe2 exhibits significant charge transfer and band hybridization at the interface, whereas 1T-TaSe2 shows weak interactions with the substrate. The distinct interfacial interactions are attributed to the dual effects from the differences of the work functions as well as the relative interlayer distance between TaSe2 films and BLG substrate. The method demonstrated here provides a viable route towards interface engineering in a variety of transition-metal dichalcogenides that can be applied to future nano-devices with designed electronic properties. © 2024, CC BY.