Stabilization of a two-dimensional quantum electron solid in perpendicular magnetic fields

作     者：Melnikov, M.Yu. Smirnov, D.G. Shashkin, A.A. Huang, S.-H. Liu, C.W. Kravchenko, S.V. 

作者机构：Institute of Solid State Physics Moscow District Chernogolovka142432 Russia Department of Electrical Engineering Graduate Institute of Electronics Engineering National Taiwan University Taipei106 Taiwan Physics Department Northeastern University BostonMA02115 United States 

出 版 物：《arXiv》 (arXiv)

年 卷 期：2024年

核心收录：

主　　题：Threshold voltage 

摘      要：We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an order of magnitude lower voltages and considerably higher electron densities compared to the zero-field case. This observation indicates the perpendicular-magnetic-field stabilization of the quantum electron solid. © 2024, CC BY.