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作者机构:College of Physics Qingdao University School of Physics State Key Laboratory of Crystal Materials Shandong University Center for Transformative Science ShanghaiTech University National Synchrotron Radiation Laboratory University of Science and Technology of China
出 版 物:《Progress in Natural Science:Materials International》 (自然科学进展·国际材料(英文))
年 卷 期:2025年第35卷第1期
页 面:194-200页
核心收录:
学科分类:0808[工学-电气工程] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:supported by National Key Research and Development Program (2019YFA0405601) National Science Foundation of China (No.22309097, 22179066, 21902179) Shandong Provincial Natural Science Foundation (2023KJ228, ZR2021QE061, ZR202103010205) the Startup Foundation for Advanced Talents in Qingdao University (DC2000005106) the Shanghai Soft X-ray Free-Electron Laser Facility beamline projection
主 题:Electrolytes Ionic conductivity Phase transitions Transistors X-ray spectroscopy
摘 要:Traditional electronic devices are reaching their physical limits as they shrink in size to improve integration. Solid ionic devices have become promising candidate to avoid tunneling effect and address these constraints, but the response time are typically sluggish. In recent years, the rapid development of solid electrolyte and solid-state battery provide superior choices to overcome limitations in ion transport. In this work, we construct an ionic transistor within Ag/LiCoO2/Li6.75La3Zr1.5Ta0.5O12(LLZTO)/Ag structure. LiCoO2serves as the channel layer of the transistor, with LLZTO acting as the electrolyte to isolate electrons and facilitate ion conduction, and Ag as the gate/anode. XRD, Raman spectroscopy, and electrochemical characterization confirm lithiation and *** characterization demonstrates the continuous resistive switching of the LiCoO2channel layer between high and low resistive states under pulsed gate voltage control, exhibiting high reversibility and long cycle stability. By combining X-ray absorption spectroscopy(XAS) and X-ray emission spectroscopy(XES), the transition between high and low resistive states can be well clarified by a first-order Mott transition scheme. These results provide new perspectives for performance improvement and further development of ionic devices.