The influence ofⅤ/Ⅲratio on electron mobility of the InAs_(x)Sb_(1-x)layers grown on GaAs substrate by molecular beam epitaxy

作     者：ZHANG Jing YANG Zhi ZHENG Li-Ming ZHU Xiao-Juan WANG Ping YANG Lin 张静;阳智;郑黎明;朱小娟;王萍;杨琳

作者机构：School of Electronic Information and Artificial IntelligenceShaanxi University of Science and TechnologyXi’an 710016China School of Mechanical and Electrical EngineeringXi’an Traffic Engineering InstituteXi’an 710300China School of Information Science and EngineeringHebei University of Science and TechnologyShijiazhuang 050018China 

出 版 物：《红外与毫米波学报》 (Journal of Infrared and Millimeter Waves)

年 卷 期：2025年第44卷第1期

页      面：25-32页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the Natural Science Basic Research Program of Shaanxi Province(2023-JC-QN-0758) Shaanxi University of Science and Technology Research Launch Project(2020BJ-26) Doctoral Research Initializing Fund of Hebei University of Science and Technology,China(1181476) 

主　　题：molecular beam epitaxy InAs_(x)Sb_(1-x) Ⅴ/Ⅲratio high electron mobility 

摘      要：This paper discusses the influence of Sb/In ratio on the transport properties and crystal quality of the 200 nm InAs_(x)Sb_(1-x)thin *** Sb content of InAs_(x)Sb_(1-x)thin film in all samples was verified by HRXRD of the symmetrical 004 reflections and asymmetrical 115 *** calculation results show that the Sb component was 0.6 in the InAs_(x)Sb_(1-x)thin film grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3,which has the highest electron mobility(28560 cm^(2)/V·s)at 300 *** the same time,the influence ofⅤ/Ⅲratio on the transport properties and crystal quality of Al_(0.2)In_(0.8)Sb/InAs_(x)Sb_(1-x)quantum well heterostructures also has been *** a result,the Al_(0.2)In_(0.8)Sb/InAs_(0.4)Sb_(0.6)quantum well heterostructure with a channel thickness of 30 nm grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3 has a maximum electron mobility of 28300 cm^(2)/V·s and a minimum RMS roughness of 0.68 *** optimizing the growth conditions,our samples have higher electron mobility and smoother surface morphology.