Logic-in-memory cell enabling binary and ternary Boolean logics

作     者：Jeongyun OH Juhee JEON Yunwoo SHIN Kyougah CHO Sangsig KIM 

作者机构：Department of Electrical EngineeringKorea University 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2025年第68卷第2期

页      面：370-379页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：partially supported by National Research Foundation of Korea Grant funded by the Korean Government (MSIT)(Grant Nos. RS-2023-00260876, 2022M317A3046571) Samsung Electronics (Grant No. IO201223-08257-01) Brain Korea 21 Plus Project a Korea University Grant 

主　　题：logic-in-memory reconfigurable channel modes ternary logic triple-gated feedback field-effect transistors 

摘      要：In computing systems, processing and memory units have been integrated into logic-in-memory(LiM) to enhance the computational efficiency and performance. LiM has been attempted to perform not only binary but also ternary logic functions, which reduces computing complexity. Herein, we demonstrate a binary and ternary LiM(BT-LiM) cell with eight triple-gated(TG) feedback field-effect transistors(FBFETs) reconfigured into n-or p-channel modes. The TG FBFETs exhibit symmetrical latch-up voltages and an on-current ratio of 1.02 between the n-and p-channel modes, which indicates a high potential for reconfigurable logic applications. The BT-LiM cell can perform YES, NOT, AND, OR, NAND, NOR, XNOR, and XOR logic functions in a single cell because of these reconfigurable characteristics. Further, binary and ternary logic functions are realized in the cell without a programming stage, and the cell maintains the results of the logic functions under zero-bias conditions. This study achieves multifunctional LiM that can operate all binary and ternary Boolean logics.