1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations

作     者：Yitao FENG Hong ZHOU Sami ALGHAMDI Hao FANG Xiaorong ZHANG Yanbo CHEN Guotao TIAN Saud WASLY Yue HAO Jincheng ZHANG 

作者机构：Key Lab of Wide Band Gap Semiconductor Materials and DevicesSchool of MicroelectronicsXidian University Center of Excellence in Intelligent Engineering Systems (CEIES)King Abdulaziz University China Resources Microelectronics Limited 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2025年第68卷第2期

页      面：389-390页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by National Natural Science Foundation of China (Grant No. 62222407) Guangdong Basic and Applied Basic Research Foundation(Grant No. 2023B1515040024) Key Research and Development Program of Jiangsu Province (Grant No. BE2020004) 

主　　题：Schottky barrier diodes 

摘      要：In recent years, large-area wide-bandgap（WBG） semiconductor materials have achieved numerous notable breakthroughs [1,2]. The ultra-WBG semiconductor β-Ga2O3,with its excellent material properties, is ideally suited for the fabrication of power devices. Moreover, it offers easily obtainable large-area substrates, with reported sizes up to 6 inches, produced through melt-grown crystal growth methods. These characteristics make β-Ga2O3highly attractive for future low-cost commercialization. Despite these advances, most research has focused on low-current and small-size diodes, with few studies addressing high-current and large-size diodes.