Silicon Carbide Power Devices: Evolution, Applications, and Future Opportunities

作     者：Mikael Östling 

作者机构：School of Electrical Engineering and Computer Science KTH Royal Institute of Technology Kista-Stockholm Sweden 

出 版 物：《IEEE Electron Devices Magazine》 

年 卷 期：2025年第2卷第4期

页      面：30-35页

主　　题：Thermal management of electronics Fabrication Power system measurements Silicon carbide Reviews Green products Silicon Power electronics Reliability Material properties 

摘      要：This review discusses the evolution and development of SiC Device technology over the past 30 years and shows opportunities in improving power efficiency by employing SiC devices in power electrical systems applications. The review discusses the challenges encountered and overcome in material development and fabrication technology