High-order AMR in two-dimensional magnetic monolayers from spin mixing

作     者：Dong, M.Q. Guo, Zhi-Xin 

作者机构：State Key Laboratory for Mechanical Behavior of Materials School of Materials Science and Engineering Xi’an Jiaotong University Shaanxi Xi’an710049 China  Institute of Computational Physical Sciences State Key Laboratory of Surface Physics Department of Physics Fudan University Shanghai200433 China 

出 版 物：《arXiv》 (arXiv)

年 卷 期：2024年

核心收录：

主　　题：Monolayers 

摘      要：Anisotropic magnetoresistance (AMR) is a well-known magnetoelectric coupling phenomenon, commonly exhibiting two-fold symmetry relative to the magnetic field. In this study, we reveal the existence of high-order AMRs in two-dimensional (2D) magnetic monolayers. Based on density functional theory (DFT) calculations of Fe3GeTe2 and CrTe2 monolayers, we find that different energy bands contribute uniquely to AMR behavior. The high-order AMR is attributed to strong spin mixing at band crossing points, which induces significant Berry curvature. This curvature also contributes to the AMR for electrons with dominant spin-up or spin-down polarization characteristics. However, for electrons exhibiting strong spin mixing, the Berry curvature effect becomes nontrivial, resulting in high-order AMR. Our findings provide an effective approach to identifying and optimizing materials with high-order AMR, which is critical for designing high-performance spintronic devices. Copyright © 2024, The Authors. All rights reserved.