The in-situ parasitic microstructure interface and defect formation mechanism in (010) β-Ga_(2)O_(3) epitaxial film via MOCVD

作     者：Xianqiang Song Yunlong He Zhan Wang Xiaoli Lu Jing Sun Ying Zhou Yang Liu Jiatong Fan Xiaoning He Xuefeng Zheng Xiaohua Ma Yue Hao 宋先强;何云龙;王湛;陆小力;孙静;周颖;刘洋;范佳桐;何晓宁;郑雪峰;马晓华;郝跃

作者机构：State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated TechnologyNational Engineering Research Center of Wide Band-Gap SemiconductorSchool of MicroelectronicsXidian UniversityXi’an 710071China School of Electronic EngineeringXi’an University of Posts&TelecommunicationsXi’an 710121China Guangzhou Institute of TechnologyXidian UniversityGuangzhou 510555China Shaanxi Semiconductor Industry AssociationXi’an 710065China 

出 版 物：《Science China Materials》 (中国科学(材料科学)(英文版))

年 卷 期：2025年第68卷第2期

页      面：515-522页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China (62474133, U2241220 and 62304172) the Opening Project of State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology (2413S111) the Fundamental Research Funds for the Central Universities of China (QTZX23019 and ZDRC2002) in part by Guangdong Basic and Applied Basic Research Foundation (2021A1515110020) 

主　　题：β-Ga_(2)O_(3) MOCVD surface defect 

摘      要：In this study, a typical hillock surface defect wasdiscovered in (010) β-Ga_(2)O_(3) thin films grown by metal-organicchemical vapor deposition (MOCVD), and the morphologyand structure were systematically investigated. The observeddefects exhibit a polygonal shape with a ridge-like hillockalong the [001] direction. Transmission electron microscopy(TEM) microanalysis reveals that polygonal hillock defects arecomposed of twin grains forming an inverted pyramid shapeembedded in the epitaxial layer, which exhibits twofold rotational symmetry along the [100] crystal direction. Theboundary between the defective and perfect lattices appearsband-like, characterized by complex faults, with structuralrelationships between the twin region and the matrix identified as [001]matrix||[010]Defect and {−310}matrix||{−201}Defect. Theorigin of surface defects in the (010) β-Ga_(2)O_(3) homoepitaxiallayers could be attributed not only to the extent of substratedefects but also to epitaxial process conditions. The definitiveexplanation is the localized aggregation of gallium atoms/oxygen vacancies during the growth process, as evidenced byenergy-dispersive X-ray (EDX) analysis and optimized experiments. This work provides brand-new perspectives intothe study of defects in β-Ga_(2)O_(3) epitaxial films, which furtheradvances the application of Ga_(2)O_(3) materials in power devicetechnologies.