Spectroscopic ellipsometry characterization of multilayer dielectric stacks on the non-ideal substrates in the microelectronics industry

作     者：Likhachev, Dmitriy V. 

作者机构：GLOBALFOUNDRIES Dresden Module One LLC & Co KG D-01109 Dresden Germany 

出 版 物：《JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3》 (J. Micro/ Nano. Mater. Metrol.)

年 卷 期：2024年第23卷第4期

核心收录：

学科分类：0808[工学-电气工程] 070207[理学-光学] 07[理学] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：European Union European Union within "NextGeneration EU Federal Ministry for Economic Affairs and Climate Action (BMWK) State of Saxony 

主　　题：in-line ellipsometric characterization surface roughness optical modeling composite dispersion model data analysis spectroscopic ellipsometry 

摘      要：Spectroscopic ellipsometry has been widely used as one of the metrology methods of choice in various industries: microelectronics, photovoltaic, optoelectronics, flat panel display, etc. We present an example of the characterization of dielectric multilayer structures on the substrates with unintended surface modifications involving macroscopic roughness. We assume that under our inspection conditions, the effect of macrorough surfaces can be treated as the presence of a specially designed overlayer on top of the ordinary substrate. A systematic procedure was then proposed to simulate the dielectric response of the overlayer. This approach is quite useful in a practical sense and provides more accurate process monitoring and control in a production environment.