Vibrational modes as the origin of dielectric loss at 0.27–100 THz in a-SiC:H

作     者：B.T. Buijtendorp A. Endo W. Jellema K. Karatsu K. Kouwenhoven D. Lamers A.J. van der Linden K. Rostem H.M. Veen 

作者机构：Faculty of Electrical Engineering Mathematics and Computer Science Delft University of Technology Mekelweg 4 2628 CD Delft Netherlands SRON Netherlands Institute for Space Research Landleven 12 9747 AD Groningen Netherlands SRON Netherlands Institute for Space Research Niels Bohrweg 4 2333 CA Leiden Netherlands NASA/Goddard Space Flight Center Code 665 Greenbelt Maryland 20771 USA 

出 版 物：《Physical Review Applied》 (Phys. Rev. Appl.)

年 卷 期：2025年第23卷第1期

页      面：014035-014035页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：European Commission, EC Universität zu Köln, UoC Kavli Nanolab Delft European Research Council, ERC, (101043486 TIFUUN) 

主　　题：Hydrogenation 

摘      要：Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band (approximately 1–10 GHz) the dielectric loss at cryogenic temperatures and low electric field strengths is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band (approximately 0.1–1 THz) is not understood. We measured the loss of hydrogenated-amorphous-SiC films in the 0.27–100-THz range using superconducting-microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in hydrogenated amorphous SiC above 200 GHz.