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内蒙古自治区呼和浩特市赛罕区大学西街235号 邮编: 010021
作者机构:Lanzhou Jiaotong Univ Minist Educ Key Lab Optoelect Technol & Intelligent Control Lanzhou 730070 Peoples R China Lanzhou Jiaotong Univ Sch Chem & Chem Engn Lanzhou 730070 Peoples R China Chinese Acad Sci Suzhou Inst Nanotech & Nanobion Printable Elect Res Ctr Suzhou 215123 Peoples R China
出 版 物:《JOURNAL OF MOLECULAR STRUCTURE》 (J. Mol. Struct.)
年 卷 期:2025年第1329卷
核心收录:
学科分类:081704[工学-应用化学] 07[理学] 070304[理学-物理化学(含∶化学物理)] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学]
基 金:Science and Technology Program of Gansu Province [22YF7GA136]
主 题:Triazatruxenederivative Phenanthro[d]imdazole Benzo[d]-imidazole 5-triphenylidazole Photoluminescence Electroluminescence
摘 要:Two new 3,8,13-trisubstituted triazatruxene derivatives containing different imidazole-derived moieties, 3,8,13TPI-TAT and 3,8,13-TTPI-TAT, were successfully synthesized by grafting different imidazole-derived moieties (phenanthroimidazole (PI) and 1,4,5-triphenylimidazole (TPI)) onto the 3,8,13-positions of a triazatruxene (TAT) core, and characterized by NMR (1H and 13C), high resolution mass spectrometry. Using the already reported 3,8,13-TBI-TAT as a comparison, the thermal stability, photophysical and electrochemical properties of these compounds were comparatively investigated to reveal the effects of different imidazole-derived groups on the luminescence properties of the compounds. The doped devices with a structure of ITO/PEDOT:PSS (45 nm)/ PVK:PBD (7:3, wt%):TAT compounds (x wt%) (30 nm)/TPBi (20 nm)/Liq (2 nm)/Al (150 nm) and non-doped devices were fabricated by solution-processed the emitting layers to investigate their electroluminescence (EL) performances, in which the devices of the diphenylimidazole substituted compound (3,8,13-TDPI-TAT) showed the best EL performances compared with that of the other two compounds. The doped devices of 3,8,13-TTPITAT exhibited a maximum luminance (Lmax) of 402 cd/m2 and a maximum external quantum efficiency (EQEmax) of 0.72 %, while its non-doped devices showed Lmax of 500 cd/m2 and the EQEmax of 1.43 %. It has important potential significance for the further design and synthesis of TAT derivatives with good charge transport and high EQE.