Orbital torque switching of room temperature two-dimensional van der Waals ferromagnet Fe3GaTe2

作     者：Zhang, Delin Wei, Heshuang Duan, Jinyu Chen, Jiali Yue, Dongdong Yang, Yuhe Gou, Jinlong Yan, Junxin Zhai, Kun Wang, Ping Hu, Shuai Jia, Zhiyan Jiang, Wei Wang, Wenhong Li, Yue Jiang, Yong 

作者机构：Institute of Quantum Materials and Devices School of Electronic and Information Engineering Tiangong University Tianjin300387 China School of Material Science and Engineering State Key Laboratory of Separation Membrane and Membrane Processes Tiangong University Tianjin300387 China School of Physical Science & Technology Tiangong University Tianjin300387 China  Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems School of Physics Beijing Institute of Technology Beijing100081 China Center for High Pressure Science State Key Laboratory of Metastable Materials Science and Technology Yanshan University Qinhuangdao066000 China 

出 版 物：《arXiv》 (arXiv)

年 卷 期：2024年

核心收录：

主　　题：Van der Waals forces 

摘      要：Efficiently manipulating the magnetization of van der Waals (vdW) ferromagnets has attracted considerable interest in developing room-temperature two-dimensional (2D) material-based memory and logic devices. Here, taking advantage of the unique properties of the vdW ferromagnet as well as promising characteristics of the orbital Hall effect, we demonstrate the room-temperature magnetization switching of vdW ferromagnet Fe3GaTe2 through the orbital torque generated by the orbital Hall material, Titanium (Ti). The switching current density is estimated to be around 1.6×106 A/cm2, comparable to that achieved in Fe3GaTe2 using spin-orbit torque from spin Hall materials (e.g., WTe2, and TaIrTe4). The efficient magnetization switching arises from the combined effects of the large orbital Hall conductivity of Ti and the strong spin-orbit correlation of the Fe3GaTe2, as confirmed through theoretical calculations. Our findings advance the understanding of orbital torque switching and pave the way for exploring 2D material-based orbitronic devices. © 2024, CC BY.