Periodically poled aluminum scandium nitride bulk acoustic wave resonators and filters for communications in the 6G era

作     者：Izhar M.M.A.Fiagbenu S.Yao X.Du P.Musavigharavi Y.Deng J.Leathersich C.Moe A.Kochhar E.A.Stach R.Vetury R.H.Olsson 

作者机构：Department of Electrical and Systems EngineeringUniversity of PennsylvaniaPhiladelphiaPA 19104USA Department of Materials Science and EngineeringUniversity of Central FloridaOrlandoFL 32816USA Akoustis Inc.HuntersvilleNC 28078USA Department of Materials Science and EngineeringUniversity of PennsylvaniaPhiladelphiaPA 19104USA 

出 版 物：《Microsystems & Nanoengineering》 (微系统与纳米工程(英文))

年 卷 期：2025年第11卷第1期

页      面：265-275页

核心收录：

学科分类：080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：the Defense Advanced Research Project Agency (DARPA) COmpact Front-end Filters at the ElEment-level (COFFEE) Program the NSF National Nanotechnology Coordinated Infrastructure Program 

主　　题：Periodically Poled Filters uniform polarization piezoelectric films electromechanical coupling k t Aluminum Scandium Nitride High Frequency Communication Bulk Acoustic Wave Resonators aluminum scandium n 

摘      要：Bulk Acoustic Wave(BAW)filters find applications in radio frequency(RF)communication systems for Wi-Fi,3G,4G,and 5G *** the beyond-5G(potential 6G)era,high-frequency bands(8 GHz)are expected to require resonators with high-quality factor(Q)and electromechanical coupling(k_(t)^(2))to form filters with low insertion loss and high ***,both the Q and k_(t)^(2)of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride(AlN)and aluminum scandium nitride(AlScN)decrease when scaled beyond 8 *** this work,we utilized 4-layer AlScN periodically poled piezoelectric films(P3F)to construct high-frequency(~17–18 GHz)resonators and *** resonator performance is studied over a range of device geometries,with the best resonator achieving a k_(t)^(2)of 11.8%and a Qp of 236.6 at the parallel resonance frequency(f_(p))of 17.9 *** resulting figures-of-merit are(FoM_(1)=k_(t)^(2)Qp and FoM_(2)=f_(p)FoM_(1)×10^(-9))27.9 and 500,*** and the k_(t)^(2)are significantly higher than previously reported AlN/AlScN-based resonators operating at similar *** 3-element and 6-element filters formed from these resonators demonstrated low insertion losses(IL)of 1.86 and 3.25 dB,and−3 dB bandwidths(BW)of 680 MHz(fractional BW of 3.9%)and 590 MHz(fractional BW of 3.3%)at a~17.4 GHz center *** 3-element and 6-element filters achieved excellent linearity with in-band input third-order intercept point(IIP3)values of+36 and+40 dBm,respectively,which are significantly higher than previously reported acoustic filters operating at similar frequencies.