Anomalous Hall and Nernst effect and thermoelectric performance of Sb-doped MnBi6Te10

作     者：Xinmeng Hu Takayoshi Katase Masaki Kondo Noriaki Hanasaki Hideaki Sakai Jiazhen Wu 

作者机构：Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen 518055 China MDX Research Center for Element Strategy International Research Frontiers Initiative Tokyo Institute of Technology 4259 Nagatsuta Midori Yokohama 226–8501 Japan Department of Physics Osaka University Toyonaka Osaka 560-0043 Japan Present address: The Institute of Solid State Physics The University of Tokyo Kashiwa Chiba 277–8581 Japan. Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology Shenzhen 518055 China Institute of Innovative Materials Southern University of Science and Technology Shenzhen 518055 China 

出 版 物：《Physical Review Materials》 (Physic. Rev. Mat.)

年 卷 期：2025年第9卷第1期

页      面：015403-015403页

核心收录：

基　　金：Guangdong Provincial Department of Science and Technology, GDSTC Department of Education of Guangdong Province, DEGP Shenzhen municipal government Southern University of Science and Technology, SUSTech Basic and Applied Basic Research Foundation of Guangdong Province, (2022A1515011295) Basic and Applied Basic Research Foundation of Guangdong Province Guangdong Provincial Key Laboratory Program, (2021B1212040001) National Natural Science Foundation of China, NSFC, (52173284, T2322009) National Natural Science Foundation of China, NSFC Shenzhen fundamental research funding, (JCYJ20220530114616036, JCYJ20210324115809026) Guangdong Provincial University Science and Technology Program, (2023KTSCX123) High level of special funds, (G03050K002) 

主　　题：Ferromagnetism 

摘      要：Mn(Sb/Bi)2nTe3n+1, a well-known family of intrinsic magnetic topological insulator, possesses nontrivial topological electronic structures, making this family an excellent platform to investigate exotic quantum phenomena. These materials are closely related to the well-known thermoelectric material Bi2Te3. Particularly, with the introduction of intrinsic magnetism, energy conversion based on the magnetothermoelectric effect has also attracted researcher s attentions. Here, we study the magnetic, electrical, and thermoelectric transport properties of a 39% Sb-doped ferromagnetic MnBi6Te10 single crystal. Upon Sb doping, the carrier density is suppressed, the electrical resistivity exhibits a semiconducting behavior, and the power factor PF and the figure of merit ZT are estimated to be 5.07µWcm−1K−2 and 0.14, respectively, at 300 K. At low temperatures, the sample displays the characteristics of two-carriers transport as indicated by the nonlinear Hall effect. The spontaneous anomalous Hall effect and anomalous Nernst effect are observed below the Curie temperature TC∼13K. The Nernst thermopower versus magnetization, |Syx|/M, exceeds the scaling law of conventional magnets, highlighting the enhanced anomalous Nernst effect arising from the intrinsic contribution of the net Berry curvature. Our results provide experimental evidence of nontrivial electronic structures in the ferromagnetic Mn(Sb/Bi)6Te10 and highlight its potential for thermoelectric applications.