版权所有:内蒙古大学图书馆 技术提供:维普资讯• 智图
内蒙古自治区呼和浩特市赛罕区大学西街235号 邮编: 010021
作者机构:Zhejiang LabHangzhou 311100China Institute of Integrated Microelectronic SystemsCollege of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310027China Faculty of Electrical Engineering and Computer ScienceNingbo UniversityNingbo 315211China
出 版 物:《Photonics Research》 (光子学研究(英文版))
年 卷 期:2025年第13卷第2期
页 面:433-441页
核心收录:
基 金:National Natural Science Foundation of China(62305303,62205164) Science and Technology Plan Project of Zhejiang(2022C01108)
主 题:microwave photonic systems ultrahigh SFDR all optical linearization silicon modulator active tuning rf power high linearity modulators third order intermodulation distortion integrated photonics
摘 要:Integrated high-linearity modulators are crucial for high dynamic-range microwave photonic(MWP)*** linearization schemes usually involve the fine tuning of radio-frequency(RF)power distribution,which is rather inconvenient for practical applications and can hardly be implemented on the integrated photonics *** this paper,we propose an elegant scheme to linearize a silicon-based modulator in which the active tuning of RF power is *** device consists of two carrier-depletion-based Mach-Zehnder modulators(MZMs),which are connected in series by a 1×2 thermal optical switch(OS).The OS is used to adjust the ratio between the modulation depths of the two *** a proper ratio,the complementary third-order intermodulation distortion(IMD3)of the two sub-MZMs can effectively cancel each other *** measured spurious-free dynamic ranges for IMD3 are 131,127,118,110,and 109 d B·Hz^(6∕7)at frequencies of 1,10,20,30,and 40 GHz,respectively,which represent the highest linearities ever reached by the integrated modulator chips on all available material platforms.