High Voltage and High Frequency DC Power Supply with Ultra High Voltage SiC Schottky Barrier Diode Modules

作     者：Nomura, Yuki Funaki, Tsuyoshi 

作者机构：Research Dept. NexFi Technology Inc. 2-1 Yamadaoka Suita-shi Osaka565-0871 Japan Dept. of Electronic and Information Engineering Osaka University 2-1 Yamadaoka Suita-shi Osaka565-0871 Japan 

出 版 物：《Journal of Japan Institute of Electronics Packaging》 (J. Jpn. Inst. Electron. Packag.)

年 卷 期：2025年第28卷第1期

页      面：123-131页

核心收录：

主　　题：Schottky barrier diodes 

摘      要：A high-voltage (HV) DC power supply typically consists of an inverter, a transformer and a Cockcroft-Walton (CW) voltage multiplier. High-frequency operation of the inverter can reduce the required capacitance of HV capacitors in the CW circuits, allowing miniaturization of HV DC power supplies. High voltage rectifying diodes used in high frequency CW circuits can reduce switching losses by using SiC Schottky barrier diodes (SBD). In this study, we developed an ultra-high voltage SiC SBD module connected in series. However, an increase in the number of SBD modules connected in series results in increased conduction loss, indicating a limitation in the high-voltage blocking capability. This paper proposes an effective circuit configuration required to improve the efficiency of an HV DC power supply by considering the number of series-connected SBDs in the module along with the number of stages in the CW circuit. © The Japan Institute of Electronics Packaging.