Revealing the True Thermoelectric Properties of SnTe through Removing SnO_(2)Contamination

作     者：Yicheng Wang Rongcheng Li Bowen Jin Chenghao Xie Xinfeng Tang Gangjian Tan 

作者机构：Hubei Longzhong LaboratoryWuhan University of Technology Xiangyang Demonstration ZoneXiangyang 441000China State Key Laboratory of Advanced Technology for Materials Synthesis and ProcessingWuhan University of TechnologyWuhan 430070China International School of Materials Science and EngineeringWuhan University of TechnologyWuhan 430070China 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报(英文版))

年 卷 期：2025年第38卷第5期

页      面：754-762页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China(Grant No.52371235) the National Natural Science Foundation of China(Grant No.52171221) 

主　　题：SnTe Thermoelectric Oxidation SnO_(2) 

摘      要：Previous studies on SnTe have indicated that its low ZT value is associated with a high carrier concentration of up to 10^(20)–10^(21)cm^(−3)and an excessively high lattice thermal ***,the high carrier concentration and lattice thermal conductivity observed in SnTe are not solely attributable to the presence of numerous intrinsic tin vacancies and a simple crystal ***,the oxides formed through the oxidation of Sn and SnTe exert a partial influence on these *** this study,by pretreating the raw Sn material and isolating it from oxygen during preparation,we achieve a significant improvement in the thermoelectric performance of binary SnTe at high temperatures,with a peak ZT of approximately 0.83 at 800 *** approach effectively reduces the content of SnO_(2)in the matrix,enhancing the electrical and thermal transport properties of the ***,the high-thermal conductivity of SnO_(2)facilitates the formation of channels at grain boundaries that are more conducive to heat transfer,while its poor electrical conductivity and Seebeck coefficient diminish the intrinsic electrical transport behavior of *** removal of SnO_(2)reflects the true thermoelectric performance of SnTe,making the samples prepared by this method stand out compared to other reported binary SnTe materials.