A Cost-Effective Hybrid Si/ SiC Dual Bridge Parallel LLC Resonant Converter for High Current Application

作     者：Ke, Zipeng Wang, Jun Hu, Bo Zhang, Chao Peng, Zishun Dai, Yuxing Shen, Z. John 

作者机构：Hunan University College of Electrical and Information Engineering Changsha410012 China Guizhou University Electrical Engineering College Guiyang550025 China Wenzhou University National-Local Joint Engineering Laboratory of Digitalize Electrical Design Technology Wenzhou325035 China Simon Fraser University School of Mechatronic Systems Engineering SurreyBCV3T 0A3 Canada 

出 版 物：《IEEE Journal of Emerging and Selected Topics in Power Electronics》 (IEEE J. Emerg. Sel. Top. Power Electron.)

年 卷 期：2025年

核心收录：

学科分类：0202[经济学-应用经济学] 1202[管理学-工商管理] 1201[管理学-管理科学与工程(可授管理学、工学学位)] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

主　　题：high efficiency Hybrid Si/SiC LLC resonant converter power loss 

摘      要：The SiC-based dual bridge paralleled (DBP) LLC resonant converter offers advantages of low current stress and high efficiency but suffers from high costs. In this article, a cost-effective hybrid Si/SiC DBP LLC resonant converter is proposed, which consists of a high-current low-cost Si IGBTs bridge arm and a low-current SiC MOSFETs bridge arm, obtaining significant cost-reduction. Benefiting the soft-switching operation of the Si IGBTs bridge arm, the proposed hybrid Si/SiC DBP LLC converter can achieve comparable switching losses with full-SiC MOSFETs design. Meanwhile, fewer resonant tanks are required benefiting from the topology reconstruction of the proposed converter, in comparison to the prior-art design of DBP LLC resonant converter, further reducing costs and power loss. A 6-kW prototype of the hybrid DBP LLC resonant converter, utilizing both Si IGBTs and SiC MOSFETs, is constructed as a case study to validate the proposed approach. Compared to the prior art full-SiC DBP LLC converter, the proposed hybrid Si/SiC LLC converter achieves comparable total power loss under high output power, while offering 51.7% switching device cost, 22.9% resonant components cost, and 31.6% total cost reductions. © 2013 IEEE.