Vertical Channel-All-Around (CAA) IGZO FET with Recessed Source/Drain Structure to Improve Contact Characteristics

作     者：Chen, Chuanke Gu, Chen Zhao, Yue Duan, Xinlv Lu, Congyan Niu, Jiebin Zhang, Kaiping Liu, Yu Zhao, Shengjie Li, Weiwei Wu, Wanming Zhang, Chunyu Hu, Ke Wang, Shipeng Tong, Qingding Tang, Yinzhi Lu, Nianduan Geng, Di Li, Ling 

作者机构：Institute of Microelectronics of Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China 

出 版 物：《IEEE Electron Device Letters》 (IEEE Electron Device Lett)

年 卷 期：2025年

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 0817[工学-化学工程与技术] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 

主　　题：Schottky barrier diodes 

摘      要：We proposed recessed source/drain(S/D) structure for vertical channel-all-around (CAA) IGZO FET to introduce contact interlayer and improve its contact characteristics. The IZO interlayer introduced between S/D and IGZO helps to reduce the contact resistance, and boosting the performance of CAA IGZO FET. The fabricated CAA IGZO FETs with 8 nm IZO interlayer show an average Ion @ Vth+1V of 32.6 μA/μm, SS of 86 mV/dec, and Vth of - 0.06 V. The Schottky barrier height qB is extracted to be reduced from 170 meV to 65 meV by introducing the contact interlayer, which confirms the improvement of contact characteristics. © 1980-2012 IEEE.