Electric Field-Controlled Interfacial Polarization Coupling in van der Waals Ferroelectric Heterojunctions

作     者：Wei Li HengLiu Hualing Zeng 李伟;柳衡;曾华凌

作者机构：International Center for Quantum Design of Functional MaterialsHefei National Research Center for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefei 230026China Key Laboratory of Strongly Coupled Quantum Matter PhysicsDepartment of PhysicsChinese Academy of SciencesUniversity of Science and Technology of ChinaHefei 230026China Hefei National LaboratoryUniversity of Science and Technology of ChinaHefei 230088China 

出 版 物：《Chinese Physics Letters》 (中国物理快报(英文版))

年 卷 期：2025年第42卷第5期

页      面：188-205页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学] 

基　　金：supported by the Chinese Academy of Sciences Project for Young Scientists in Basic Research (Grant No. YSBR-049) the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302800) the Fundamental Research Funds for the Central Universities (Grant No. WK3510000013) 

主　　题：graphene ferroelectric heterojunctions interfacial polarization coupling ferroelectric fiel electric field van der waals ferroelectric heterojunctions interfacial electrical characteristics vdw ferroelectric heterojunctions 

摘      要：Recent advances in van der Waals(vdW) ferroelectrics have sparked the development of related heterostructures with non-volatile and field-tunable functionalities. In vdW ferroelectric heterojunctions, the interfacial electrical characteristics play a crucial role in determining their performance and functionality. In this study,we explore the interfacial polarization coupling in two-dimensional(2D) ferroelectric heterojunctions by fabricating a graphene/h-BN/CuInP_(2)S_(6)/α-In_(2)Se_(3)/Au ferroelectric field-effect transistor. By varying the gate electric field, the CuInP_(2)S_(6)/α-In_(2)Se_(3) heterojunction displays distinct interfacial polarization coupling states, resulting in significantly different electrical transport behaviors. Under strong gate electric fields, the migration of Cu ions further enhances the interfacial polarization effect, enabling continuous tuning of both the polarization state and carrier concentration in α-In_(2)Se_(3). Our findings offer valuable insights for the development of novel multifunctional devices based on 2D ferroelectric materials.