Electrical Transport in Transparent Conducting Tin-doped Indium Oxide Films

作     者：Yeh, S. S. Lu, J. Y. Shiu, M. W. Lin, J. J. 

作者机构：Institute of Physics National Chiao Tung University Hsinchu 30010 Taiwan Electrical Engineering and Computer Science Undergraduate Honor Program National Chiao Tung University Hsinchu 30010 Taiwan Department of Electrophysics National Chiao Tung University Hsinchu 30010 Taiwan 

出 版 物：《AIP Conference Proceedings》 (美国物理学会会议录)

年 卷 期：2006年第850卷第1期

页      面：1548-1549页

学科分类：07[理学] 0702[理学-物理学] 

主　　题：Bloch-Gruneisen law disorder Electrical transport 

摘      要：We have studied the temperature behavior of the electrical resistivities ρ(T) in a series of tin-doped indium-oxide films with different residual resistivities ρ0 varying from 218 to 568 μΩ cm. We found that the temperature dependence of ρ can be well described by the Bloch-Grüneisen law from 300 K down to about 100 K. In particular, we observed that the strength of the electron-phonon coupling, βBG (which characterizes a prefactor in the Bloch-Grüneisen formula) increases linearly with increasing ρ0. This result is not understood in terms of current theoretical concept for electron-phonon interaction in metals. © 2006 American Institute of Physics [ABSTRACT FROM AUTHOR]