Dynamically Screened Electron‐Phonon Interaction in Disorder Semiconductors

作     者：P. Tripathi S. S. Z. Ashraf S. T. Hasan K. N. Vyas A. C. Sharma 

作者机构：aDepartment of Applied Physics ZHECT Aligarh Muslim University Aligarh 202 002 UP India bPhysics Department Shibli National P.G. College Azamgarh 276 001 India cPhysics Department Faculty of Science The M.S. University of Baroda Vadodara 390 002 India 

出 版 物：《AIP Conference Proceedings》 

年 卷 期：2011年第1393卷第1期

页      面：91-92页

学科分类：07[理学] 0702[理学-物理学] 

摘      要：We have presented a theoretical investigation of the effects of disorder on the electron‐phonon interaction in semiconducting GaAs system. Both the temperature (T) and disorder (electron mean free path l) dependences of the electron‐phonon scattering rate τe‐ph have been determined. On consideration of the dynamic dielectric function and polarization operator, we find a significant change in the temperature exponent as well as the pre factor α from the earlier reported approximate temperature power law dependence αT3 obtained under static strong screening and impurity limit. Significant change is found in the character of the dependence of scattering rate on the mean free path on the incorporation of dynamic screening.