Nanosecond Characterization of Regional Domain Imprint from Fast Domain Switching Currents in Pb(Zr,Ti)O_3 Thin Films

作     者：江钧 江安全 

作者机构：State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan University 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2016年第33卷第2期

页      面：122-124页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Supported by the National Key Basic Research Program of China under Grant No 2014CB921004 the National Natural Science Foundation of China under Grant Nos 61225020 and 61176121 the Program for Professor of Special Appointment(Eastern Scholar)in Shanghai 

主　　题：of from in Ti 

摘      要：The traditional imprint characterization of ferroelectric thin films estimates imprint time dependence of the mean coercive voltage of all domains from a polarization-voltage hysteresis loop, which shows a semilogarithmic time dependence above an initial imprint time of το 〉 1 μs at room temperature. Below το, the imprint effect is believed to be weak. In consideration of region-by-region domain reversal under a rising pulsed voltage with ordered coercive voltages increasing from zero up to the maximum applied voltage during capacitor charging time, we can estimate the imprinted coercive voltage of each domain from domain switching current transient separately with imprint time as short as 20ns. In disagreement with the previous observations, all imprinted coercive voltages for the domains in Pt/Pb（Zr0.4 Ti0.6）O3/Pt thin-film capacitors show step-like increases at two characteristic times of 300ns and 0.27s. The imprint effect is surprisingly strong enough even at shortened time down to 20ns without any evidence of weakening.