Highly improved resistive switching performances of the self-doped Pt/HfO_2:Cu/Cu devices by atomic layer deposition

作     者：Sen Liu Wei Wang QingJiang Li XiaoLong Zhao Nan Li Hui Xu Qi Liu Ming Liu 

作者机构：College of Electronic Science and Engineering National University of Defense Technology Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application Wuhan University 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2016年第59卷第12期

页      面：72-77页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 61521064, 61422407, 61474136, 61334007, 61574166, 6127409, 61322408, 61522408, 61574169, 61471377, 61604177 and 61306117) the National High Technology Research Development Program (Grant No. 2014AA032901) Beijing Training Project for the Leading Talents in S&T (Grant No. ljrc201508) NUDT Research Funding Program (Grant No. JC-15-04-02) the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics the Chinese Academy of Sciences, Youth Innovation Promotion Association CAS (Grant No. 2015096) the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201504) 

主　　题：resistive switching nonvolatile memory ECM Cu dopant 

摘      要：Metal-oxide electrochemical metallization (ECM) memory is a promising candidate for the next generation nonvolatile *** this memory suffers from large dispersion of resistive switching parameters due to the intrinsic randomness of the conductive filament. In this work, we have proposed a self-doping approach to improve the resistive switching characteristics. The fabricated Pt/HfO_2:Cu/Cu device shows outstanding nonvolatile memory properties, including high uniformity, good endurance, long retention and fast switching speed. The results demonstrate that the self-doping approach is an effective method to improve the metal-oxide ECM memory performances and the self-doped Pt/HfO_2:Cu/Cu device has high potentiality for the nonvolatile memory applications in the future.