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Resistive Switching: Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride (Adv. Funct. Mater. 10/2017)
作者机构：Institute of Functional Nano and Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nanoscience and Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China Department of Electrical Engineering and Computer Sciences Massachusetts Institute of Technology Cambridge MA 02139 USA Department of Materials Science and Engineering Stanford University CA 94305 USA Rowland Institute Harvard University Cambridge MA 02142 USA State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 China DISMI Università di Modena e Reggio Emilia 42122 Reggio Emilia Italy Electronic Engineering Department Universitat Autonoma de Barcelona 08193 Cerdanyola del Vallés Spain Forschungszentrum Jülich GmbH 52425 Jülich Germany
出 版 物：《Advanced Functional Materials》
年 卷 期：2017年第27卷第10期
主 题：bipolarity hexagonal boron nitride resistive switching RRAM
