Tuning the electronic effective mass in double-doped SrTiO3

作     者：J. Ravichandran W. Siemons M. L. Scullin S. Mukerjee M. Huijben J. E. Moore A. Majumdar R. Ramesh 

作者机构：Applied Science and Technology Graduate Group University of California Berkeley California 94720 USA Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley California 94720 USA Department of Physics University of California Berkeley California 94720 USA Department of Materials Science and Engineering University of California Berkeley California 94720 USA Department of Physics Indian Institute of Science Bangalore 560012 India Faculty of Science and Technology and MESA+ Institute for Nanotechnology University of Twente P.O. Box 217 NL-7500AE Enschede The Netherlands Department of Mechanical Engineering University of California Berkeley California 94720 USA 

出 版 物：《Physical Review B》 (物理学评论B辑：凝聚态物质与材料物理学)

年 卷 期：2011年第83卷第3期

页      面：035101-035101页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：Link FoundationNetherlands Organization for Scientific Research (NWO) Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, US Department of Energy [DE-AC02-05CH11231] 

主　　题：EFFECTIVE mass (Physics) OXIDES SEMICONDUCTORS LANTHANUM compounds TRANSPORT theory (Mathematics) THIN films 

摘      要：We elucidate the relationship between effective mass and carrier concentration in an oxide semiconductor controlled by a double-doping mechanism. In this model oxide system, Sr1−xLaxTiO3−δ, we can tune the effective mass ranging from 6 to 20me as a function of filling (carrier concentration) and the scattering mechanism, which are dependent on the chosen lanthanum- and oxygen-vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr1−xLaxTiO3−δ. We show that the effective mass decreases with carrier concentration in this large-band-gap, low-mobility oxide, and this behavior is contrary to the traditional high-mobility, small-effective-mass semiconductors.