Tuning of the electron g factor in defect-free GaAs nanodisks

作     者：Li-Wei Yang Yi-Chia Tsai Yiming Li Akio Higo Akihiro Murayama S. Samukawa O. Voskoboynikov 

作者机构：Department of Electronic Engineering and Institute of Electronics National Chiao Tung University 1001 Ta Hsueh Road Hsinchu 300 Taiwan Department of Electrical and Computer Engineering National Chiao Tung University 1001 Ta Hsueh Road Hsinchu 300 Taiwan WPI-Advanced Institute for Materials Research Tohoku University Aoba-ku Sendai Miyagi 9808577 Japan Graduate School of Information Science and Technology Hokkaido University Kita 14 Nishi 9 Kita-ku Sapporo Japan CREST Japan Science and Technology Agency 5 Sanbancho Chiyoda-ku Tokyo Japan Institute of Fluid Science Tohoku University Aoba-ku Sendai Miyagi 9808577 Japan 

出 版 物：《Physical Review B》 (物理学评论B辑：凝聚态物质与材料物理学)

年 卷 期：2015年第92卷第24期

页      面：245423-245423页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：WPI-Advanced Institute for Materials Research of the Tohoku University Ministry of Science and Technology, Taiwan [NSC 102-2112-M-009-004-MY2, MOST 103-2221-E-009-180] Aiming for the Top University Program of the National Chiao Tung University 

主　　题：TUNING (Electronics) ELECTRONS GALLIUM arsenide NANOSTRUCTURED materials GROUND state (Quantum mechanics) SEMICONDUCTORS CONDUCTION band SPIN-orbit coupling 

摘      要：We theoretically study the impact of changes in surroundings on the electron ground-state effective g factor in defect-free GaAs/AlGaAs nanodisks. To perform the study, we formulate and deploy a computational efficient full three-dimensional model to describe the effective g-factor tensor in semiconductor nano-objects of complex geometry and material content. This model is based on an effective 2×2 conduction-band Hamiltonian which includes the Rashba and Dresselhaus spin-orbit couplings. The description is suited to clarify the important question of the controllability of the electron effective g factor in semiconductor nano-objects. The results of this theoretical study suggest that in the defect-free GaAs/AlGaAs nanodisks, the effective g factor can be tuned within a wide range by proper design of the nanodisk environment. The zz components of the electron effective g-factor tensor obtained in our simulation are in good agreement with some recent experimental observations.