Surface diffusion of Pb on clean Si surfaces

作     者：Dolbak, AE Zhachuk, RA Olshanetsky, BZ 

作者机构：Russian Acad Sci Inst Semicond Phys Novosibirsk 630090 Russia 

出 版 物：《CENTRAL EUROPEAN JOURNAL OF PHYSICS》 (中欧物理学杂志)

年 卷 期：2004年第2卷第2期

页      面：254-265页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

主　　题：surface silicon lead surface structure surface diffusion low energy electron diffraction auger electron spectroscopy 

摘      要：Pb diffusion on clean Si(111), (100) and (110) surfaces was studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 100 to 300degreesC. It is shown that lead transport along silicon surfaces takes place via the mechanism of solid-phase spreading with a sharp moving boundary. The temperature dependence of the Pb diffusion coefficients on Si(111), (100) and (110) surfaces have been obtained. A Si(110)-4 x 2-Pb surface structure has been observed for the first time. (C) Central European Science Journals. All rights reserved.