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作者机构:Key Laboratory of Polar Materials and Devices Ministry of Education East China Normal University Shanghai 200062 People’s Republic of China College of Physics Science and Technology Guangxi University Nanning Guangxi 530004 People’s Republic of China National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 People’s Republic of China Novel Materials Laboratory Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 People’s Republic of China
出 版 物:《Physical Review B》 (物理学评论B辑:凝聚态物质与材料物理学)
年 卷 期:2010年第81卷第19期
页 面:195312-195312页
核心收录:
基 金:Special Funds for Major State Basic Research Project [2007CB924900] National Natural Science Foundation of China [60906045, 60221502, 60606025] National Science Foundation for Post-doctoral Scientists of China Scientific Research Foundation of GuangXi University [X071109, XB2090777]
摘 要:The beating patterns in the Shubnikov-de Haas oscillatory magnetoresistance originating from zero-field spin splitting of two-dimensional electron gases (2DEGs) in In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As quantum wells with silicon δ doped on the upper barrier layer have been investigated by means of magnetotransport measurements before and after illumination. Contrary to the expectation, after each illumination, the beating nodes induced by the zero-field spin-splitting effect shift to lower and lower magnetic field due to the decrease in the zero-field spin-splitting energy of the 2DEGs. The anomalous phenomenon of the shift of the beating nodes and the decrease in spin-orbit coupling constants after illumination cannot be explained by utilizing the previous linear Rashba model. It is suggested that the decrease in the zero-field spin-splitting energy and the spin-orbit coupling constant arise from the nonlinear Rashba spin splitting.