Fabrication of annular photonic crystals by atomic layer deposition and sacrificial etching

作     者：Feng, Junbo Chen, Yao Blair, John Kurt, Hamza Hao, Ran Citrin, D.S. Summers, Christopher J. Zhou, Zhiping 

作者机构：School of Optoelectronics Science and Engineering Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan 430074 China Department of Electronic Science and Technology Huazhong University of Science and Technology Wuhan Hubei 430074 China School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332-0245 United States Department of Electrical and Electronics Engineering TOBB University of Economics and Technology Ankara 06560 Turkey School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA 30332-0250 United States Unit Mixte Internationale 2958 Georgia Tech-CNRS Georgia Tech Lorraine 2 rue Marconi 57070 Metz France State Key Laboratory on Advanced Optical Communication Systems and Networks Peking University Beijing 100871 China 

出 版 物：《Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures》 (J Vac Sci Technol B Microelectron Nanometer Struct)

年 卷 期：2009年第27卷第2期

页      面：568-572页

核心收录：

基　　金：This work is partially supported by the National Basic Research Program of China (No. 2006CB708310). DSC would like to thank the CNRS for its support 

主　　题：Atomic layer deposition 

摘      要：In this article, the fabrication process of annular photonic crystals on silicon-on-insulator wafers was addressed for the first time. A self-alignment procedure for nanofabrication using atomic layer deposition and sacrificial etching was established to place accurately nanosized dielectric rods in nanosized circular air holes. Avoiding the challenging electron-beam lithography alignment, this method achieves atomic level precision and shows high stability. © 2009 American Vacuum Society.