Compensation mechanism for semi-insulating 6H-SiC doped with vanadium

作     者：Wang, Chao Zhang, Yimen Zhang, Yuming Wang, Yuehu Xu, Daqing 

作者机构：Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices Microelectronics Institute Xidian University Xi'an 710071 China 

出 版 物：《Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors》 (Pan Tao Ti Hsueh Pao)

年 卷 期：2008年第29卷第2期

页      面：206-209页

核心收录：

主　　题：Silicon carbide 

摘      要：A model is presented to describe a compensation mechanism for semi-insulating 6H-SiC grown with the intentional doping of vanadium. Because we found nitrogen to be the principal shallow donor impurity in SiC by secondary ion mass spectroscopy (SIMS) measurements, semi-insulating properties in SiC are achieved by compensating the nitrogen donor with the vanadium deep acceptor level. The presence of different vanadium charge states V3+ and V4+ is detected by electron paramagnetic resonance and optical absorption measurements, which coincides with the results obtained by SIMS measurements. Both optical absorption and low temperature photoluminescence measurements reveal that the vanadium acceptor level is located at 0.62eV below the conduction band in 6H-SiC.