Thermoelectric properties on Zn+ ion implantation into polycrystalline lead telluride

作     者：Zhang, L. Li, J. Wang, G. Li, J. Ye, M. 

作者机构：State Key Lab. of Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China Department of Physics Wuhan University Wuhan 430072 China 

出 版 物：《Materials Science Forum》 (Mater Sci Forum)

年 卷 期：1999年第308-311卷

页      面：704-710页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 08[工学] 070203[理学-原子与分子物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

主　　题：Lead compounds 

摘      要：PbTe is a useful thermoelectric material for the design of functionally graded materials (FGM) thermoelectric device. Since the maximum figure of merit shifts in a wide temperature range depending upon carrier concentration, the stepwise carrier concentration FGM of PbTe is expected to attain high efficiency of thermoelectric energy conversion. In order to improve the carrier concentration profile, 110 KeV Zn+ ions were implanted into n-type PbTe samples. X-ray diffraction (XRD) has been used to examine the effect of ions implantation on the structure of PbTe. By varying the ion dose it is possible to investigate the Zn-PbTe phase relationship, and the effect of forming a joint boundary on the thermoelectric properties of PbTe. Electrical resistance and Hall coefficient measurements have also been carried out as a function of implantation dose at room temperature.