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作者机构:Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Microelectronics Institute Xidian University Xi'an 710071 China Beijing Microelectronics Institute of Technology Beijing 100076 China
出 版 物:《Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors》 (Pan Tao Ti Hsueh Pao)
年 卷 期:2008年第29卷第6期
页 面:1040-1043页
核心收录:
摘 要:A multiplexer with a low-distortion high-bandwidth analog switch is presented. The gate-to-source voltage of the switch is set by the combined on-voltage of a pMOS and an nMOS, and the difference between its gate-source voltage and the threshold voltage (VGST) is guaranteed to be constant with input variation. Thus, the body effect is nearly canceled. Implemented in a TSMC 0.18 μm CMOS process, results from HSPICE simulation show that the VGST is nearly constant with an input range from 0.3 to 1.7 V, and the -3 dB bandwidth is larger than 10 GHz;the SFDR (spurious free dynamic range) of the output is 67.11 dB with 1 GHz input frequency;the turn-on time is 2.98 ns, and the turn-off time is 1.35 ns, which indicates a break-before-make action of the multiplexer. The proposed structure can be applied to high speed signal transmission.