Suppression of boron penetration for p+ polysilicon gate electrodes by ultra-thin RPECVD nitride films in composite oxide-nitride dielectrics

作     者：Yider Wu Gerald Lucovsky 

作者机构：1Departments of Electrical & Computer Engineering North Carolina State University Raleigh North Carolina 27695-7911 2Department of Physics North Carolina State University Raleigh North Carolina 27695-7911 

出 版 物：《AIP Conference Proceedings》 

年 卷 期：1998年第449卷第1期

页      面：288-291页

学科分类：07[理学] 0702[理学-物理学] 

摘      要：Ultra-thin (0.4∼0.8 nm) silicon nitride films were deposited by RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) onto thin oxides for the p+-polysilicon gated PMOS devices. Boron penetration is suppressed when the top nitride layer thickness increased to at least 0.8 nm. Suppression of boron diffusion is monitored by flat band voltage shifts as well as polysilicon depletion. Compared to oxides, improved charge to breakdown (Qbd) is obtained for nitride/oxide dual layers, while interface state density remains at a level of 3×1010 eV−1 cm−2.