SI AND GAAS SIS HETEROSTRUCTURE SOLAR-CELLS USING SPRAY-DEPOSITED ITO

作     者：SHARMA, PP ANTHONY, TC ASHOK, S FONASH, SJ TONGSON, LL 

作者机构：Materials Research Laboratory the Pennsylvania State University Engineering Science Program Department of Engineering Science and Mechanics The Pennsylvania State University University Park PA 16802 USA 

出 版 物：《JAPANESE JOURNAL OF APPLIED PHYSICS》 (日本应用物理学杂志，第二分册)

年 卷 期：1980年第19卷第S1期

页      面：551-556页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

摘      要：A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type Si and GaAs using spray-deposited indium-tin oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I-layer have been optimized to yield the following photovoltaic parameters on 1 Ω-cm n-Si: Voc=0.52 V, Jsc=31.5 mA/cm2 (adjusted for Ag grid area), FF=0.70 and effective area η=11.5%. The dark I-V and C-V characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.