Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator

作     者：Qing Lin He Gen Yin Luyan Yu Alexander J. Grutter Lei Pan Chui-Zhen Chen Xiaoyu Che Guoqiang Yu Bin Zhang Qiming Shao Alexander L. Stern Brian Casas Jing Xia Xiaodong Han Brian J. Kirby Roger K. Lake K. T. Law Kang L. Wang 

作者机构：Department of Electrical Engineering University of California Los Angeles California 90095 USA International Center for Quantum Materials Peking University Beijing 100871 China NIST Center for Neutron Research National Institute of Standards and Technology Gaithersburg Maryland 20899-6102 USA Department of Physics Hong Kong University of Science and Technology Clear Water Bay Hong Kong China Beijing Key Lab of Microstructure and Property of Advanced Materials Beijing University of Technology 100124 Beijing China Department of Physics and Astronomy University of California Irvine California 92697 USA Laboratory for Terascale and Terahertz Electronics (LATTE) Department of Electrical and Computer Engineering University of California Riverside Riverside California 92521 USA 

出 版 物：《Physical Review Letters》 (物理评论快报)

年 卷 期：2018年第121卷第9期

页      面：096802-096802页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：Norsk Sykepleierforbund, NSF Energy Frontier Research Center Croucher Foundation U.S. Department of Energy, USDOE Pittsburgh Supercomputing Center Office of Science, SC National Thousand-Young-Talents Program in China National Key Research and Development Program of China, NKRDPC, (2018YFA0305601) National Science Foundation, NSF, (1411085, ACI-1445606, 1411085) National Natural Science Foundation of China, NSFC, (11874070) Tai-chin Lo Foundation, (OCI-1053575) Army Research Office, ARO, (W911NF-15-1-10561) Basic Energy Sciences, BES, (S000686) Research Grants Council, University Grants Committee, RGC, UGC, (C6026-16W) 

主　　题：Antiferromagnetism Magnetic interactions Magnetization switching Topological materials Topological phases of matter Topological insulators 

摘      要：Magnetism in topological insulators (TIs) opens a topologically nontrivial exchange band gap, providing an exciting platform for manipulating the topological order through an external magnetic field. Here, we show that the surface of an antiferromagnetic thin film can magnetize the top and the bottom TI surface states through interfacial couplings. During the magnetization reversal, intermediate spin configurations are ascribed from unsynchronized magnetic switchings. This unsynchronized switching develops antisymmetric magnetoresistance spikes during magnetization reversals, which might originate from a series of topological transitions. With the high Néel ordering temperature provided by the antiferromagnetic layers, the signature of the induced topological transition persists up to ∼90 K.