LPE Growth of Atomically Flat Ge Layer on a Mesa Pattern

作     者：Takahiro Maruyama Keiji Matsuda Norikazu Saikawa Shigeya Naritsuka 

作者机构：Dept. of Materials Science & Engineering Meijo University Meijo University 21st CENTURY COE program “NANO FACTORY” 1–501 Shiogama-guchi Tempaku-ku Nagoya 468–8502 Japan 

出 版 物：《MRS Online Proceedings Library (OPL)》 

年 卷 期：2011年第788卷第1期

页      面：L3.47-L3.47页

摘      要：Aiming at the growth of step free surface on mesas, we tried to suppress the formation of two-dimensional nucleation on grown surface by decreasing the supersaturation. When the supersaturation was enough small at the growth temperature below 400 °C, flat facets were formed on some mesas after the LPE growth for 30 min. We considered that these facets are formed on mesas with dislocation-free surface, considering the dislocation density of Ge substrate. AFM observation indicated that some triangle hollows with monolayer step in depth were present on these facets, but that the region among the hollows was atomically flat. It was also found that the amount and the size of the hollows were related to the growth temperature. Our results show the possibility that atomically flat Ge area beyond 100 μm2 will be obtained by the control of the growth condition.