Characteristics of Si-Sb-Te Films for Phase Change Memory

作     者：Jie Feng Yin ZHANG Baowei Qiao Yanfei Cai Yinyin Lin Tingao Tang Bingchu Cai Bomy Chen 

作者机构：jfeng@*** Shanghai Jiao Tong University Key lab. for thin film and microfabrication of Ministry of Education Inst. of Micro/Nano Sci.& Tech 1954 Huasan Road Shanghai N/A 200030 China People's Republic of 86-21-62823631 zy13225@*** Shanghai Jiao Tong University Key lab. for thin film and microfabrication of Ministry of Education Inst. of Micro/Nano Sci.& Tech 1954 Huasan Road Shanghai N/A 200030 China People's Republic of qbwhappy@*** Shanghai Jiao Tong University Key lab. for thin film and microfabrication of Ministry of Education Inst. of Micro/Nano Sci.& Tech 1954 Huasan Road Shanghai N/A 200030 China People's Republic of yylin@*** Fudan University State Key Laboratory of ASIC £¦ System Shanghai N/A 200433 China People's Republic of tatang@*** Fudan University State Key Laboratory of ASIC £¦ System Shanghai N/A 200433 China People's Republic of bccai@*** Shanghai Jiao Tong University Key lab. for thin film and microfabrication of Ministry of Education Inst. of Micro/Nano Sci.& Tech 1954 Huasan Road Shanghai N/A 200030 China People's Republic of bchen@*** Silicon Storage Technology Inc. 1171 Sonora Court Sunnyvale CA 94086 United States 

出 版 物：《MRS Online Proceedings Library (OPL)》 

年 卷 期：2011年第918卷第1期

页      面：0918-H08-04-0918-H08-04页

主　　题：phase transformation film devices 

摘      要：The novel phase change materials Si-Sb-Te films were prepared. The crystallization temperature of films increases with the increasing of Si concentration. Phase separation was observed in the Si-Sb-Te films, the dominant phase is Sb2Te3. The melting temperature of Si-Sb-Te decreased to ~550°C lower than 640°C of Ge2Sb2Te5. The decrease of film thickness of Si-Sb-Te films is less than 2% after annealing at 400°C, which is less than ~7% of the film thickness change of Ge2Sb2Te5 film. The crystalline resistivity of Si-Sb-Te films increased and the ratio of amorphous/crystalline resistivity of Si-Sb-Te films increased also comparing with Ge2Sb2Te5 film, which is benefit to reduce the writing current and keep higher on/off ratio of phase change memory. Reversible switch was performed in the devices with Si-Sb-Te films. The device with Si14.3Sb28.6Te57.2 film can be programmed with a 100 ns SET pulse and a 20 ns RESET pulse. The Reset current is only 1.37mA for a 10μm-sized device.