Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30 Silicon Layer

作     者：Yukio Nakabayashi Hirman I. Osman Toru Segawa Kazunari Toyonaga Satoru Matsumoto Junichi Murota Kazumi Wada Takao Abe 

作者机构：Dept. of Electronics and Electrical Engineering Keio Univ. Yokohama Japan Tohoku Univ. Res. Inst. of Electrical Communication Sendai Japan Dept. of MS&E Massachusetts Institute of Technology Cambridge USA Sin-Etsu Handootai Isobe R&D Center Gunma Japan 

出 版 物：《MRS Online Proceedings Library》 

年 卷 期：2011年第669卷第1期

页      面：1-6页

摘      要：Silicon self-diffusion coefficients were measured in intrinsic and extrinsic silicon from870 to 1070°C using isotopically pure 30Si layer. 30Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si isobtained. Comparing it in heavily As-doped or B-doped Si, it is found that Si self-diffusion is entirely mediated by interstitialcy mechanism at lower temperatures below 870°C.