Calculation of valence band structures of InAs/GaAs quantum ring and quantum dot:using numerical Fourier transform method

作     者：JIA Bo-yong,YU Zhong-yuan,LIU Yu-min,TIAN Hong-da Key Laboratory of Information Photonics and Optical Communications,Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100876,China 

作者机构：[a] Key Laboratory of Information Photonics Optical Communications Ministry of Education Beijing University of Posts Telecommunications Beijing 100876 China 

出 版 物：《The Journal of China Universities of Posts and Telecommunications》 (中国邮电高校学报（英文版）)

年 卷 期：2010年第17卷第1期

页      面：106-110页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the Hi-Tech Research and Development Program of China (2009AA03Z405) the National Natural Science Foundation of China (60908028) the National Natural Science Foundation of China (60971068) the High School Innovation and Introducing Talent Project of China (B07005) 

主　　题：valence band structures quantum ring quantum dot numerical Fourier transform 

摘      要：This article puts forward a new method in calculating the band structures of low-dimensional semiconductor structures. In this study, the valence band structures of InAs/GaAs quantum ring and lens-shaped quantum dot are calculated with four-band model, in the framework of effective-mass envelope function theory. To determine the Hamiltonian matrix elements, this article develops the numerical Fourier transform method instead of the widely used analytical integral method. The valence band mixing is considered. The hole energy levels change dramatically with the geometrical parameters of the quantum ring and quantum dot. It is demonstrated that numerical Fourier transform method can be adopted in low-dimensional structures with any shape. The results of Fourier transform method are consistent with the ones of analytical integral in literature; and they are helpful for studying and fabricating optoelectronic devices.