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作者机构:Univ Toulouse Inst Super Aeronaut & Espace Integrated Image Sensor Lab F-31055 Toulouse France
出 版 物:《IEEE ELECTRON DEVICE LETTERS》 (IEEE Electron Device Lett)
年 卷 期:2011年第32卷第6期
页 面:776-778页
核心收录:
主 题:CMOS image sensor (CIS) correlated double sampling (CDS) low frequency noise (LFN) noisy pixel reduction random telegraph signal (RTS) noise
摘 要:This letter presents a novel readout architecture and its associated readout sequence for complementary metal-oxide-semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel source-follower transistor random telegraph signal noise. Measurement results done on a test image sensor designed with 0.35-mu m CIS technology demonstrate an efficient reduction of noisy pixel numbers without a pixel performance decrease.