咨询与建议

看过本文的还看了

相关文献

该作者的其他文献

文献详情 >Novel Readout Circuit Architec... 收藏
IEEE ELECTRON DEVICE LETTERS

Novel Readout Circuit Architecture for CMOS Image Sensors Minimizing RTS Noise

作     者:Martin-Gonthier, Philippe Magnan, Pierre 

作者机构:Univ Toulouse Inst Super Aeronaut & Espace Integrated Image Sensor Lab F-31055 Toulouse France 

出 版 物:《IEEE ELECTRON DEVICE LETTERS》 (IEEE Electron Device Lett)

年 卷 期:2011年第32卷第6期

页      面:776-778页

核心收录:

学科分类:0808[工学-电气工程] 08[工学] 

主  题:CMOS image sensor (CIS) correlated double sampling (CDS) low frequency noise (LFN) noisy pixel reduction random telegraph signal (RTS) noise 

摘      要:This letter presents a novel readout architecture and its associated readout sequence for complementary metal-oxide-semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel source-follower transistor random telegraph signal noise. Measurement results done on a test image sensor designed with 0.35-mu m CIS technology demonstrate an efficient reduction of noisy pixel numbers without a pixel performance decrease.

读者评论 与其他读者分享你的观点

用户名:未登录
我的评分