FABRICATION OF DEVICES USING VACUUM-DEPOSITED A-SI

作     者：AUDAS, RD BRODIE, DE 

作者机构：Guelph-Waterloo Program for Graduate Work in Physics Ont Canada 

出 版 物：《CANADIAN JOURNAL OF PHYSICS》 (加拿大物理学杂志)

年 卷 期：1989年第67卷第4期

页      面：195-198页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

主　　题：Semiconducting Silicon 

摘      要：The long-term objective of this work is to produce a stable, efficient amorphous Si (a-Si) solar cell by a safe and inexpensive method. A process of reactive evaporation in a silane ambient was developed. This technique permits the fabrication of intrinsic-like a-Si:H. p-Type and n-type samples (carrier type was confirmed by Seebeck measurements) were prepared by the coevaporation of boron or reactive evaporation in a phosphorus ambient. The intrinsic-like samples have a room temperature conductivity of about 2 × 10−12 S cm−1, high temperature activation energies of 0.9 eV, and optical bandgaps near 1.8 eV. An all-amorphous Si:H pin diode was fabricated using this reactive evaporation process. The device consists of a tantalum contact, 20 – 40 nm of phosphorus doped a-Si:H, 300 – 400 nm of undoped a-Si:H, 20 – 40 nm of boron doped a-Si:H, and another tantalum contact.